INTERNAL PHOTOEMISSION-STUDIES OF (GAIN)AS, (ALIN)AS SCHOTTKY DIODES AND (GAIN)AS/(ALIN)AS HETEROJUNCTION GROWN BY MOLECULAR-BEAM EPITAXY

被引：11

作者：

HSIEH, KH ^{[1
]}

WICKS, G ^{[1
]}

CALAWA, AR ^{[1
]}

EASTMAN, LF ^{[1
]}

机构：

[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 02期

关键词：

D O I：

10.1116/1.583222

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：700 / 702

页数：3

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