GA0.47IN0.53AS FIELD-EFFECT TRANSISTORS WITH A LATTICE-MISMATCHED REDUCED LEAKAGE CURRENT GAAS GATE

被引：4

作者：

GARBINSKI, PA

CHEN, CY

CHO, AY

机构：

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 05期

关键词：

D O I：

10.1049/el:19860162

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：236 / 238

页数：3

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共 11 条

[1] SATURATION VELOCITY DETERMINATION FOR IN0.53GA0.47AS FIELD-EFFECT TRANSISTORS
BANDY, S
NISHIMOTO, C
HYDER, S
HOOPER, C
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 817 - 819
[2] GAAS/GA0.47IN0.53AS LATTICE-MISMATCHED SCHOTTKY-BARRIER GATES - INFLUENCE OF MISFIT DISLOCATIONS ON REVERSE LEAKAGE CURRENTS
CHEN, CY
CHU, SNG
CHO, AY
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (12) : 1145 - 1147
[3] A NEW GA0.47IN0.53AS FIELD-EFFECT TRANSISTOR WITH A LATTICE-MISMATCHED GAAS GATE FOR HIGH-SPEED CIRCUITS
CHEN, CY
CHO, AY
GARBINSKI, PA
[J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (01) : 20 - 21
[4] DEPLETION MODE MODULATION DOPED AL0.48IN0.52AS-GA0.47IN0.53AS HETEROJUNCTION FIELD-EFFECT TRANSISTORS
CHEN, CY
CHO, AY
CHENG, KY
PEARSALL, TP
OCONNOR, P
GARBINSKI, PA
[J]. ELECTRON DEVICE LETTERS, 1982, 3 (06): : 152 - 155
[5] MEASUREMENT OF THE GAMMA-L SEPARATION IN GA-0.47IN-0.53 AS BY ULTRAVIOLET PHOTOEMISSION
CHENG, KY
CHO, AY
CHRISTMAN, SB
PEARSALL, TP
ROWE, JE
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (05) : 423 - 425
[6] SCHOTTKY-BARRIER HEIGHT OF N-INXGA1-XAS DIODES
KAJIYAMA, K
MIZUSHIMA, Y
SAKATA, S
[J]. APPLIED PHYSICS LETTERS, 1973, 23 (08) : 458 - 459
[7] COMPOSITIONAL DEPENDENCE OF THE ELECTRON-MOBILITY IN IN1-XGAXASYP1-Y
LEHENY, RF
BALLMAN, AA
DEWINTER, JC
NAHORY, RE
POLLACK, MA
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (03) : 561 - 568
[8] EXPERIMENTAL-DETERMINATION OF THE EFFECTIVE MASSES FOR GAXIN1-XASYP1-Y ALLOYS GROWN ON INP
NICHOLAS, RJ
PORTAL, JC
HOULBERT, C
PERRIER, P
PEARSALL, TP
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (08) : 492 - 494
[9] OLIVER JD, 1979, 21ST EL MAT C BOULD
[10] PEARSALL TP, 1981, I PHYS C SER, V56, P639