DEEP ELECTRON TRAPPING CENTERS IN SI-DOPED INALAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：36

作者：

NAKASHIMA, K

NOJIMA, S

KAWAMURA, Y

ASAHI, H

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1987年 / 103卷 / 02期

关键词：

D O I：

10.1002/pssa.2211030222

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：511 / 516

页数：6

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