DX CENTER - CROSSOVER OF DEEP AND SHALLOW STATES IN SI-DOPED ALXGA1-XAS

被引：50

作者：

OSHIYAMA, A

OHNISHI, S

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.33.4320

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4320 / 4323

页数：4

共 31 条

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