DEEP ELECTRON TRAPPING CENTER IN SI-DOPED INGAAIP GROWN BY MOLECULAR-BEAM EPITAXY

被引：71

作者：

NOJIMA, S

TANAKA, H

ASAHI, H

机构：

来源：

关键词：

D O I：

10.1063/1.336819

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3489 / 3494

页数：6

共 14 条

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[9] DIRECT EVIDENCE FOR THE DX CENTER BEING A SUBSTITUTIONAL DONOR IN ALGAAS ALLOY SYSTEM
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