LASER-INDUCED DIFFUSION BY IRRADIATION OF SILICON DIPPED INTO AN ORGANIC SOLUTION OF THE DOPANT

被引：25

作者：

STUCK, R

FOGARASSY, E

MULLER, JC

HODEAU, M

WATTIAUX, A

SIFFERT, P

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 09期

关键词：

D O I：

10.1063/1.92490

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：715 / 717

页数：3

共 9 条

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[2]

FOGARASSY E, 1980 PHOT SOL EN C C

[3]

FOGARASSY E, UNPUBLISHED

[4] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].

IRVIN, JC .

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[5]

KIMERLING LC, 1980, LASER ELECTRON BEAM, P385

[6] P-N-JUNCTION FORMATION IN BORON-DEPOSITED SILICON BY LASER-INDUCED DIFFUSION [J].

NARAYAN, J ;

YOUNG, RT ;

WOOD, RF ;

CHRISTIE, WH .

APPLIED PHYSICS LETTERS, 1978, 33 (04) :338-340

[7]

STUCK R, 1980, P S LASER ELECTRON B, P193

[8] SOLID SOLUBILITIES OF IMPURITY ELEMENTS IN GERMANIUM AND SILICON [J].

TRUMBORE, FA .

BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (01) :205-233

[9] ELECTRICAL AND STRUCTURAL CHARACTERISTICS OF LASER-INDUCED EPITAXIAL LAYERS IN SILICON [J].

YOUNG, RT ;

NARAYAN, J ;

WOOD, RF .

APPLIED PHYSICS LETTERS, 1979, 35 (06) :447-449

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