THIN-FILMS OF CUBIC BORON-NITRIDE ON SILICON

被引:11
作者
ZHOU, DS
CHEN, CL
MITCHELL, TE
HACKENBERGER, LB
MESSIER, R
机构
[1] LOS ALAMOS NATL LAB,CTR MAT SCI,LOS ALAMOS,NM 87545
[2] PENN STATE UNIV,MAT RES LAB,UNIVERSITY PK,PA 16802
关键词
D O I
10.1080/09500839508242447
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thin films of cubic boron nitride were grown on Si(100) surfaces using an ion-beam-assisted physical vapour deposition process. We studied the film microstructure with transmission electron microscopy and selected-area electron diffraction. The films are polycrystalline with a grain size as large as 0.4 mu m. Sometimes individual grains are found to extend through the film. Electron diffraction and large-angle tilting were used to identify clearly the structure as cubic boron nitride. Multiple twins on (111) planes are abundant in individual grains, as revealed by electron diffraction.
引用
收藏
页码:163 / 166
页数:4
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