DEVICE MODELING BY DETERMINISTIC SELF-CONSISTENT SOLUTION OF POISSON AND BOLTZMANN TRANSPORT-EQUATIONS

被引:23
作者
LIN, HC
GOLDSMAN, N
MAYERGOYZ, ID
机构
[1] Department of Electrical Engineering, University of Maryland, College Park
关键词
D O I
10.1016/0038-1101(92)90277-J
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new deterministic approach to device modeling has been developed in which the Boltzmann transport equation and the Poisson equation are solved self-consistently. With this approach, the nonequilibrium space-dependent momentum distribution function along with the electric potential are obtained throughout the entire device. The distribution function provides essentially all the information required for all aspects of device analysis. The new method has been applied to an n+-n-n+ diode. The simulations have provided good results, and are obtained in approx. 1/100 the CPU time required by similar Monte-Carlo calculations. This method is valuable for use in CAD tools for semiconductor devices.
引用
收藏
页码:769 / 778
页数:10
相关论文
共 15 条
[1]  
CONWELL EM, 1968, PHYS REV, V166, P7797
[2]   DIFFUSION EFFECTS AND BALLISTIC TRANSPORT [J].
COOK, RK ;
FREY, J .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) :951-953
[3]   ALCOHOL-CONSUMPTION AND BLOOD-PRESSURE - SURVEY OF THE RELATIONSHIP AT A HEALTH-SCREENING CLINIC [J].
COOKE, KM ;
FROST, GW ;
THORNELL, IR ;
STOKES, GS .
MEDICAL JOURNAL OF AUSTRALIA, 1982, 1 (02) :65-69
[4]  
GEORGE A, 1980, SPARSPAK USER GUIDE
[5]   A PHYSICS-BASED ANALYTICAL NUMERICAL-SOLUTION TO THE BOLTZMANN TRANSPORT-EQUATION FOR USE IN DEVICE SIMULATION [J].
GOLDSMAN, N ;
HENRICKSON, L ;
FREY, J .
SOLID-STATE ELECTRONICS, 1991, 34 (04) :389-396
[7]   TRANSPORT AND DEFORMATION-POTENTIAL THEORY FOR MANY-VALLEY SEMICONDUCTORS WITH ANISOTROPIC SCATTERING [J].
HERRING, C ;
VOGT, E .
PHYSICAL REVIEW, 1956, 101 (03) :944-961
[8]   THE MONTE-CARLO METHOD FOR THE SOLUTION OF CHARGE TRANSPORT IN SEMICONDUCTORS WITH APPLICATIONS TO COVALENT MATERIALS [J].
JACOBONI, C ;
REGGIANI, L .
REVIEWS OF MODERN PHYSICS, 1983, 55 (03) :645-705
[9]   A GLOBALLY CONVERGENT ALGORITHM FOR THE SOLUTION OF THE STEADY-STATE SEMICONDUCTOR-DEVICE EQUATIONS [J].
KORMAN, CE ;
MAYERGOYZ, ID .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (03) :1324-1334
[10]   AN EFFICIENT DETERMINISTIC SOLUTION OF THE SPACE-DEPENDENT BOLTZMANN TRANSPORT-EQUATION FOR SILICON [J].
LIN, HC ;
GOLDSMAN, N ;
MAYERGOYZ, ID .
SOLID-STATE ELECTRONICS, 1992, 35 (01) :33-42