DISTRIBUTION OF MOBILE CARRIERS IN PINCH-OFF REGION OF AN INSULATED-GATE FIELD-EFFECT TRANSISTOR AND ITS INFLUENCE ON DEVICE BREAKDOWN

被引：20

作者：

ARMSTRONG, GA

MAGOWAN, JA

机构：

来源：

SOLID-STATE ELECTRONICS | 1971年 / 14卷 / 08期

关键词：

D O I：

10.1016/0038-1101(71)90151-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：723 / +

页数：1

共 22 条

[1]

ALLEN DND, 1954, RELAXATION METHODS E, P198

[2]

AMES WF, 1965, NONLINEAR PARTIAL DI, P371

[3] 2-DIMENSIONAL SOLUTION OF DC CHARACTERISTICS FOR MOST [J].

ARMSTRONG, GA ;

MAGOWAN, JA ;

RYAN, WD .

ELECTRONICS LETTERS, 1969, 5 (17) :406-+

[4] PINCH-OFF INSULATED-GATE FIELD EFFECT TRANSISTORS [J].

ARMSTRONG, GA ;

MAGOWAN, JA .

SOLID-STATE ELECTRONICS, 1971, 14 (08) :760-+

[5] MODELLING OF SHORT-CHAMMEL MOS TRANSISTORS [J].

ARMSTRONG, GA ;

MAGOWAN, JA .

ELECTRONICS LETTERS, 1970, 6 (10) :313-+

[6]

Armstrong H. L., 1957, IRE T ELECTRON DEV, VED-4, P15

[7] CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J].

CAUGHEY, DM ;

THOMAS, RE .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12) :2192-+

[8] PHYSICAL LIMITATIONS OF MOS STRUCTURES [J].

DAS, MB .

SOLID-STATE ELECTRONICS, 1969, 12 (05) :305-+

[9] DC NUMERICAL MODEL FOR ARBITRARILY BIASED BIPOLAR TRANSISTORS IN 2 DIMENSIONS [J].

DUBOCK, P .

ELECTRONICS LETTERS, 1970, 6 (03) :53-&

[10]

GRAAFF HCD, 1970, PHILIPS RES REP, V25, P21

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