A NEW ELECTROCHEMICAL SELENIZATION TECHNIQUE FOR PREPARATION OF METAL-SELENIDE SEMICONDUCTOR THIN-FILMS

Electrochemical selenization of vacuum-deposited metal films in (SeSO3)2- containing baths have been described for the preparation of metal selenide semiconductor thin films. Energy dispersive x-ray analysis and x-ray diffraction studies show that CuSe, InSe, and CdSe thin films prepared by this technique are adherent, single phase, and spatially homogeneous. The stoichiometry and crystallographic phase of the semiconductor films depends on the kinetics of selenization but are less critically dependent on selenization current and Se concentration under parameters favoring uninhibited selenization.