QUANTUM CONFINEMENT AND CHARGE CONTROL IN DEEP MESA ETCHED QUANTUM WIRE DEVICES

被引：15

作者：

JOVANOVIC, D ^{[1
]}

LEBURTON, JP ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,CHAMPAIGN,IL 61820

来源：

IEEE ELECTRON DEVICE LETTERS | 1993年 / 14卷 / 01期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/55.215083

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Novel aspects of charge confinement in quantum wires are investigated with a self-consistent Schrodinger-Poisson model in the high-temperature regime. A decreasing eigenenergy separation with gate bias is revealed which differs from the behavior observed in 2D devices. In addition, charge control is examined and an analytical approximation relating charge density to gate bias is obtained.

引用

页码：7 / 9

页数：3

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