ELECTRON-STATES IN NARROW GATE-INDUCED CHANNELS IN SI

被引：188

作者：

LAUX, SE

STERN, F

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 02期

关键词：

D O I：

10.1063/1.97361

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：91 / 93

页数：3

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