CURRENT TRANSPORT MECHANISM OF HYDROGENATED AMORPHOUS-SILICON SCHOTTKY-BARRIER DIODES

被引：19

作者：

MISHIMA, Y

HIROSE, M

OSAKA, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 03期

关键词：

D O I：

10.1143/JJAP.20.593

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：593 / 596

页数：4

共 13 条

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[7]

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[9] AMORPHOUS-SILICON HYDROGEN ALLOYS PRODUCED UNDER MAGNETIC-FIELD [J].

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[10]

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