SPUTTERING OF MULTICOMPONENT MATERIALS - ELEMENTS OF A THEORY

[1] DEPTH RESOLUTION OF SPUTTER PROFILING [J]. APPLIED PHYSICS, 1979, 18 (02): : 131 - 140

[2] ANDERSEN HH, 1980, PHYSICS IONIZED GASE, P421

[3] ANDERSEN N, 1974, K DAN VID SELSK MAT, V39

[4] BETZ G, SPUTTERING PARTICLE

[5] PHENOMENOLOGICAL MODEL OF PREFERRED SPUTTERING FOR SIMS AND AUGER PROFILING - CRITICAL ANALYSIS [J]. SURFACE SCIENCE, 1980, 92 (2-3) : 601 - 616

[6] PREFERENTIAL SPUTTERING OF BINARY-ALLOYS WITH DIFFUSION - EQUILIBRIUM DISTRIBUTION [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 37 (1-2): : 13 - 19

[7] DATZ S, 1974, PHYSICS IONIZED GASE, P91

[8] DATZ S, 1975, ATOMIC COLLISIONS SO, P115

[9] DEPTH OF ORIGIN OF SPUTTERED ATOMS [J]. APPLIED PHYSICS, 1981, 25 (03): : 307 - 310

[10] THE PENETRATION OF POSITIVE IONS OF LOW ENERGY INTO ALLOYS AND COMPOSITION CHANGES PRODUCED IN THEM BY SPUTTERING [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 11 (1-2) : 55 - &

[1] DEPTH RESOLUTION OF SPUTTER PROFILING [J]. APPLIED PHYSICS, 1979, 18 (02): : 131 - 140

[2] ANDERSEN HH, 1980, PHYSICS IONIZED GASE, P421

[3] ANDERSEN N, 1974, K DAN VID SELSK MAT, V39

[4] BETZ G, SPUTTERING PARTICLE

[5] PHENOMENOLOGICAL MODEL OF PREFERRED SPUTTERING FOR SIMS AND AUGER PROFILING - CRITICAL ANALYSIS [J]. SURFACE SCIENCE, 1980, 92 (2-3) : 601 - 616

[6] PREFERENTIAL SPUTTERING OF BINARY-ALLOYS WITH DIFFUSION - EQUILIBRIUM DISTRIBUTION [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 37 (1-2): : 13 - 19

[7] DATZ S, 1974, PHYSICS IONIZED GASE, P91

[8] DATZ S, 1975, ATOMIC COLLISIONS SO, P115

[9] DEPTH OF ORIGIN OF SPUTTERED ATOMS [J]. APPLIED PHYSICS, 1981, 25 (03): : 307 - 310

[10] THE PENETRATION OF POSITIVE IONS OF LOW ENERGY INTO ALLOYS AND COMPOSITION CHANGES PRODUCED IN THEM BY SPUTTERING [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 11 (1-2) : 55 - &