EPITAXIAL-GROWTH OF YTTRIUM IRON-GARNET BY CHEMICAL VAPOR-DEPOSITION

被引：11

作者：

MIKAMI, M ^{[1
]}

MATSUMI, K ^{[1
]}

机构：

[1] NIPPON ELECT CO LTD,CENTR RES LABS,KAWASAKI,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1977年 / 37卷 / 01期

关键词：

D O I：

10.1016/0022-0248(77)90136-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：1 / 8

页数：8

共 7 条

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TAKEI, WJ ;

OEFFINGER, TR .

MATERIALS RESEARCH BULLETIN, 1972, 7 (07) :627-+

[2] A STAGNANT LAYER MODEL FOR EPITAXIAL GROWTH OF SILICON FROM SILANE IN A HORIZONTAL REACTOR [J].

EVERSTEYN, FC ;

SEVERIN, PJW ;

BREKEL, CHJV ;

PEEK, HL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (07) :925-+

[3]

GENTILMAN RL, 1973, J AM CERAM SOC, V56, P627

[4]

HIDAKA Y, 1975, AIP C P, V24, P633

[5] MAGNETIC OXIDE FILMS [J].

MEE, JE ;

PULLIAM, GR ;

ARCHER, JL ;

BESSER, PJ .

IEEE TRANSACTIONS ON MAGNETICS, 1969, MAG5 (04) :717-+

[6] CHEMICAL VAPOR DEPOSITION OF EPITAXIAL YIG ON YAG AND EPITAXIAL GDIG ON YAG [J].

MEE, JE ;

ARCHER, JL ;

MEADE, RH ;

HAMILTON, TN .

APPLIED PHYSICS LETTERS, 1967, 10 (10) :289-&

[7]

RUNDLE PC, 1968, INT J ELECTRON, V24, P405, DOI 10.1080/00207216808938037

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