WET ETCHING OF THIN SNO2 FILMS

被引：3

作者：

GUEORGUIEV, VK

POPOVA, LI

BESHKOV, GD

TOMAJOVA, NA

机构：

[1] Institute of Solid State Physics, Bulgarian Academy of Sciences, 1784 Sofia

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1990年 / 24卷 / 01期

关键词：

D O I：

10.1016/0924-4247(90)80049-B

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The etching behaviour of thin SnO2 films on Si in hydroiodic acid is investigated. The etch rate depends linearly on the acid concentration in the range 22-55% and increases monotonically with the temperature up to 40 °C. A steep increase in observed for higher temperatures. The etching of SnO2 films in HI gives excellent pattern resolution and edge quality and is suitable for submicron-size realization. © 1990.

引用

页码：61 / 63

页数：3

共 8 条

[1] ETCHING METHODS FOR INDIUM OXIDE-TIN OXIDE-FILMS
BRADSHAW, G
HUGHES, AJ
[J]. THIN SOLID FILMS, 1976, 33 (02) : L5 - L8
[2] PLASMA-ETCHING OF SNO2 FILMS ON SILICON SUBSTRATES
BRAGA, ES
MAMMANA, AP
MAMMANA, CIZ
ANDERSON, RL
[J]. THIN SOLID FILMS, 1980, 73 (02) : L5 - L6
[3] GRISEL A, 1986, 2ND P INT M CHEM SEN, P247
[4] MECHANISM OF SEMICONDUCTOR GAS SENSOR OPERATION
MORRISON, SR
[J]. SENSORS AND ACTUATORS, 1987, 11 (03): : 283 - 287
[5] POPOVA L, IN PRESS STRUCTURE M
[6] EFFECT OF CH4, SO2 AND NO ON THE CO RESPONSE OF AN SNO2-BASED THICK-FILM GAS SENSOR IN COMBUSTION GASES
ROMPPAINEN, P
TORVELA, H
VAANANEN, J
LEPPAVUORI, S
[J]. SENSORS AND ACTUATORS, 1985, 8 (04): : 271 - 279
[7] FUNDAMENTAL CHARACTERIZATION OF CLEAN AND GAS-DOSED TIN OXIDE
SEMANCIK, S
COX, DF
[J]. SENSORS AND ACTUATORS, 1987, 12 (02): : 101 - 106
[8] VANHERWAARDEN AW, 1988, EUROSENSORS, V2, P155

← 1 →