OPTIMIZATION OF THE INP/SIO2 INTERFACE TREATMENT BY (NH4)2SX FOR THE INP MISFET FABRICATION TECHNOLOGY

被引：10

作者：

PETITJEAN, M ^{[1
]}

PROUST, N ^{[1
]}

CHAPEAUBLANC, JF ^{[1
]}

PERRIN, J ^{[1
]}

机构：

[1] ECOLE POLYTECH,PHYS INTERFACES & COUCHES MINCES LAB,CNRS,UPR A0258,F-91128 PALAISEAU,FRANCE

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1992年 / 33卷 / 1-2期

关键词：

D O I：

10.1016/0924-4247(92)80221-N

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the InP surface sulfidation by (NH4)2S or (NH4)2Sx solutions is investigated in order to reduce the long-term drain-current-drift of MISFET devices and the interface state density at the InP/SiO2 interface. In order to ensure good reproducibility of this treatment, a full chemical characterization of the ammonium sulfide solutions is proposed. After surface sulfidation, an annealing is done in the photo-CVD chamber before depositing the insulator: at 350-degrees-C the initial InPS4 layer is transformed into a stable In2S3 phase without degradation of the P/In ratio. Thanks to this InP surface processing, the 1 MHz and 10 kHz C(V) characteristics of MIS diodes exhibit a deep depletion regime, N(ss) = 2 x 10(10) eV-1 cm-2, and very little frequency dispersion. These results are very encouraging for the MISFET fabrication process.

引用

页码：33 / 38

页数：6

共 12 条

[1]

GENDRY M, 1986, THESIS U SCI TECHNIQ, V139

[2] SULFUR AS A SURFACE PASSIVATION FOR INP [J].

IYER, R ;

CHANG, RR ;

LILE, DL .

APPLIED PHYSICS LETTERS, 1988, 53 (02) :134-136

[3]

IYER R, 1991, 3RD P INT C INP REL

[4]

KRAPP J, 1932, THESIS U LYON

[5] UNIVERSAL PASSIVATION EFFECT OF (NH4)2SX TREATMENT ON THE SURFACE OF III-V COMPOUND SEMICONDUCTORS [J].

OIGAWA, H ;

FAN, JF ;

NANNICHI, Y ;

SUGAHARA, H ;

OSHIMA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (3A) :L322-L325

[6]

PASCAL P, 1966, NOUVEAU TRAITE CHIM, V2, P462

[7] SIO2 DEPOSITION BY DIRECT PHOTOLYSIS AT 185 NM OF N2O AND SIH4 [J].

PETITJEAN, M ;

PROUST, N ;

CHAPEAUBLANC, JF .

APPLIED SURFACE SCIENCE, 1990, 46 (1-4) :189-194

[8]

PLAIS F, 1990, 8TH P S PLASM PROC

[9]

TOKUDA H, 1989, I PHYS C SER, V106, P405

[10]

TOKUDA H, 1988, I PHYS C SER, V96, P475

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