SIO2 DEPOSITION BY DIRECT PHOTOLYSIS AT 185 NM OF N2O AND SIH4

被引：17

作者：

PETITJEAN, M ^{[1
]}

PROUST, N ^{[1
]}

CHAPEAUBLANC, JF ^{[1
]}

机构：

[1] ECOLE POLYTECH,PHYS INTERFACES & COUCHES MINCES,CNRS,UPR A 0258,F-91128 PALAISEAU,FRANCE

来源：

APPLIED SURFACE SCIENCE | 1990年 / 46卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(90)90140-U

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Silicon dioxide films obtained by 185 nm photolysis and chemical vapour deposition from SiH4 and N2O on InP and Si are shown to have the dielectric properties required for MISFET applications. A gas-phase kinetic modelling is presented where the initial photolysis of N2O produces metastable O(1D) atoms which react with N2O and generate O2. The subsequent photolysis of O2 produces ground state O(3P) atoms which finally dissociate SiH4. © 1990.

引用

页码：189 / 194

页数：6

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