SIO2 FILM GROWTH BY DOUBLE-EXCITATION PHOTO-CVD USING SI3H8 AND O-2

被引：4

作者：

OKUYAMA, M

FUJIKI, N

INOUE, K

HAMAKAWA, Y

机构：

来源：

APPLIED SURFACE SCIENCE | 1988年 / 33-4卷

关键词：

D O I：

10.1016/0169-4332(88)90336-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：427 / 433

页数：7

共 14 条

[1] HYDROGENATED AMORPHOUS-SILICON GROWTH BY CO2-LASER PHOTO-DISSOCIATION OF SILANE [J].

BILENCHI, R ;

GIANINONI, I ;

MUSCI, M .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) :6479-6481

[2] LASER PHOTODEPOSITION OF METAL-FILMS WITH MICROSCOPIC FEATURES [J].

DEUTSCH, TF ;

EHRLICH, DJ ;

OSGOOD, RM .

APPLIED PHYSICS LETTERS, 1979, 35 (02) :175-177

[3] LOW-TEMPERATURE GROWTH OF SIO2 THIN-FILM BY DOUBLE-EXCITATION PHOTO-CVD [J].

INOUE, K ;

MICHIMORI, M ;

OKUYAMA, M ;

HAMAKAWA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (06) :805-811

[4] VACUUM ULTRAVIOLET-ABSORPTION CROSS-SECTIONS OF SIH4, GEH4, SI2H6, AND SI3H8 [J].

ITOH, U ;

TOYOSHIMA, Y ;

ONUKI, H ;

WASHIDA, N ;

IBUKI, T .

JOURNAL OF CHEMICAL PHYSICS, 1986, 85 (09) :4867-4872

[5] DIRECT PHOTOCHEMICAL DEPOSITION OF SIO2 FROM THE SI2H6+O2 SYSTEM [J].

MISHIMA, Y ;

HIROSE, M ;

OSAKA, Y ;

ASHIDA, Y .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) :1234-1236

[6] EPITAXIAL-GROWTH OF SILICON BY PHOTOCHEMICAL VAPOR-DEPOSITION AT A VERY LOW-TEMPERATURE OF 200-DEGREES-C [J].

NISHIDA, S ;

SHIIMOTO, T ;

YAMADA, A ;

KARASAWA, S ;

KONAGAI, M ;

TAKAHASHI, K .

APPLIED PHYSICS LETTERS, 1986, 49 (02) :79-81

[7] PHOTO-CHEMICAL VAPOR-DEPOSITION OF SILICON-NITRIDE FILM BY DIRECT PHOTOLYSIS [J].

NUMASAWA, Y ;

YAMAZAKI, K ;

HAMANO, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (12) :L792-L794

[8]

OKABE H, 1978, PHOTOCHEMISTRY SMALL, P149

[9] SIO2 THIN-FILM PREPARED FROM SI3H8 AND O-2 BY PHOTO-CVD USING DOUBLE EXCITATION [J].

OKUYAMA, M ;

FUJIKI, N ;

INOUE, K ;

HAMAKAWA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (06) :L908-L910

[10] PHOTOINDUCED CHEMICAL VAPOR-DEPOSITION OF SIO2 FILM USING DIRECT EXCITATION PROCESS BY DEUTERIUM LAMP [J].

OKUYAMA, M ;

TOYODA, Y ;

HAMAKAWA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (02) :L97-L99

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