EPITAXIAL-GROWTH OF SILICON BY PHOTOCHEMICAL VAPOR-DEPOSITION AT A VERY LOW-TEMPERATURE OF 200-DEGREES-C

被引：62

作者：

NISHIDA, S

SHIIMOTO, T

YAMADA, A

KARASAWA, S

KONAGAI, M

TAKAHASHI, K

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 02期

关键词：

D O I：

10.1063/1.97626

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：79 / 81

页数：3

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