SILICON EPITAXY AT 650-800-DEGREES-C USING LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION BOTH WITH AND WITHOUT PLASMA ENHANCEMENT

被引：140

作者：

DONAHUE, TJ

REIF, R

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 08期

关键词：

D O I：

10.1063/1.335418

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2757 / 2765

页数：9

共 31 条

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