LASER-INDUCED CHEMICAL VAPOR-DEPOSITION OF SIO2

[1] LOW-TEMPERATURE GROWTH OF POLYCRYSTALLINE SI AND GE FILMS BY ULTRAVIOLET-LASER PHOTO-DISSOCIATION OF SILANE AND GERMANE [J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 183 - 185

[2] BURGGRAAF PS, 1980, MAR SEM INT, P26

[3] CLARK JH, 1978, APPL PHYS LETT, V32, P47

[4] PHOTOCHEMISTRY OF N2O ESSENTIAL TO A SIMPLIFIED VACUUM-ULTRAVIOLET ACTINOMETER [J]. JOURNAL OF CHEMICAL PHYSICS, 1967, 47 (11) : 4373 - &

[5] RADIATION DAMAGE IN RADIO-FREQUENCY-SPUTTERED SIO2 FILMS [J]. APPLIED PHYSICS LETTERS, 1969, 15 (07) : 232 - &

[6] JOHNSTON HS, 1974, CAN J CHEM, V52, P1680

[7] KIM HM, 1981, ELECTROCHEMICAL SOC, V81, P258

[8] LEPSELTER MP, 1981, VLSI ELECTRONICS MIC, P87

[9] MATTSON B, 1980, SOLID STATE TECH JAN, P60

[10] PETER JW, 1981, TECH DIGEST INT ELEC, P240

[1] LOW-TEMPERATURE GROWTH OF POLYCRYSTALLINE SI AND GE FILMS BY ULTRAVIOLET-LASER PHOTO-DISSOCIATION OF SILANE AND GERMANE [J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 183 - 185

[2] BURGGRAAF PS, 1980, MAR SEM INT, P26

[3] CLARK JH, 1978, APPL PHYS LETT, V32, P47

[4] PHOTOCHEMISTRY OF N2O ESSENTIAL TO A SIMPLIFIED VACUUM-ULTRAVIOLET ACTINOMETER [J]. JOURNAL OF CHEMICAL PHYSICS, 1967, 47 (11) : 4373 - &

[5] RADIATION DAMAGE IN RADIO-FREQUENCY-SPUTTERED SIO2 FILMS [J]. APPLIED PHYSICS LETTERS, 1969, 15 (07) : 232 - &

[6] JOHNSTON HS, 1974, CAN J CHEM, V52, P1680

[7] KIM HM, 1981, ELECTROCHEMICAL SOC, V81, P258

[8] LEPSELTER MP, 1981, VLSI ELECTRONICS MIC, P87

[9] MATTSON B, 1980, SOLID STATE TECH JAN, P60

[10] PETER JW, 1981, TECH DIGEST INT ELEC, P240