RADIATIVE-TRANSFER IN MERCURY-SENSITIZED PHOTOCHEMICAL VAPOR-DEPOSITION

被引：12

作者：

PERRIN, J

BROEKHUIZEN, T

机构：

来源：

JOURNAL OF QUANTITATIVE SPECTROSCOPY & RADIATIVE TRANSFER | 1987年 / 38卷 / 05期

关键词：

D O I：

10.1016/0022-4073(87)90031-8

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：369 / 380

页数：12

共 33 条

[1]

Azzam RMA, 1977, ELLIPSOMETRY POLARIZ

[2]

BIBERMAN LM, 1947, ZH EKSP TEOR FIZ+, V17, P416

[3]

BIBERMAN LM, 1949, ZH EKSP TEOR FIZ+, V19, P584

[4]

BROEKHUIZEN T, 1987, IN PRESS REV PHYS AP

[5]

CALVERT JG, 1966, PHOTOCHEMISTRY, pCH2

[6] SELF-ABSORPTION OF SPECTRUM LINES [J].

COWAN, RD ;

DIEKE, GH .

REVIEWS OF MODERN PHYSICS, 1948, 20 (02) :418-455

[7] HIGH-RATE PHOTOCHEMICAL DEPOSITION OF AMORPHOUS-SILICON FROM HIGHER SILANES [J].

DELAHOY, AE .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 :833-836

[8]

DRAKE HJ, 1981, KIRKOTHMER ENCY CHEM, V15, P146

[9] GROWTH OF HYDROGENATED AMORPHOUS-SILICON DUE TO CONTROLLED ION-BOMBARDMENT FROM A PURE SILANE PLASMA [J].

DREVILLON, B ;

PERRIN, J ;

SIEFERT, JM ;

HUC, J ;

LLORET, A ;

DEROSNY, G ;

SCHMITT, JPM .

APPLIED PHYSICS LETTERS, 1983, 42 (09) :801-803

[10]

FURSSOW W, 1936, PHYS Z SOWJETUNION, V10, P378

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