HIGH JC Y-BA-CU-O THIN-FILM ON METAL SUBSTRATES PREPARED BY CHEMICAL VAPOR-DEPOSITION

被引：6

作者：

AOKI, S ^{[1
]}

YAMAGUCHI, T ^{[1
]}

IIJIMA, Y ^{[1
]}

KAGAWA, A ^{[1
]}

KOHNO, O ^{[1
]}

NAGAYA, S ^{[1
]}

INOUE, T ^{[1
]}

机构：

[1] CHUBU ELECT POWER CO INC,MIDOR KU,NAGOYA 459,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 5A期

关键词：

Y-BA-CU-O SUPERCONDUCTOR; CHEMICAL VAPOR DEPOSITION (CVD); THIN FILM; METAL SUBSTRATE; BUFFER LAYER;

D O I：

10.1143/JJAP.31.L547

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High J(c) superconducting Y-Ba-Cu-O (YBCO) thin films were prepared on metal substrates at 700-degrees-C under low oxygen partial pressure by chemical vapor deposition (CVD). Two kinds of substrates were used. One is a polycrystalline Hi-based alloy (Hastelloy C-276) with YSZ and Ag buffers, and another is the same alloy with a biaxially aligned YSZ(100) buffer. The biaxially aligned YSZ(100) buffer layer was formed by ion-beam-assisted deposition (IBAD). According to X-ray diffraction (XRD) analysis, these films were c-axis oriented. The YBCO film on Hastelloy C-276 with YSZ and Ag buffers had a critical temperature (Tc) with zero resistivity at 84.5 K and a critical current density (J(c)) of 5.7 x 10(3) A/cm2(77.3 K, 0 T). YBCO film on Hastelloy C-276 with a biaxially aligned YSZ(100) buffer had a T(c) at 87.5 K and J(c) of 7.1 x 10(4) A/cm2 (77.3 K, 0 T) and 3.0 x 10(3) A/cm2 (77.3 K, 7 T).

引用

页码：L547 / L549

页数：3

共 8 条

[1] CHARACTERISTICS OF HIGH-TC SUPERCONDUCTING THIN-FILMS PREPARED BY CHEMICAL VAPOR-DEPOSITION [J].