FORMATION OF EPITAXIAL BETA-FESI2 FILMS ON SI(001) AS STUDIED BY MEDIUM-ENERGY ION-SCATTERING

被引：35

作者：

KONUMA, K ^{[1
]}

VRIJMOETH, J ^{[1
]}

ZAGWIJN, PM ^{[1
]}

FRENKEN, JWM ^{[1
]}

VLIEG, E ^{[1
]}

VANDERVEEN, JF ^{[1
]}

机构：

[1] NEC CORP LTD,MICROELECTR RES LABS,KANAGAWA 229,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 03期

关键词：

D O I：

10.1063/1.353273

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ultrathin (approximately 1.3 nm) epitaxial films of beta-FeSi2 Were grown on Si (001) by room temperature (RT) deposition of Fe followed by annealing. During the various stages of the growth process, the lattice structure, composition, and morphology of the films were investigated by medium-energy ion scattering in conjunction with shadowing and blocking. At RT, the deposited Fe reacts with the Si(001) substrate and forms a continuous film of average composition FeSi. After annealing to 670 K, a conversion into beta-FeSi2 has taken place and the film is no longer continuous. Further annealing at higher temperatures results in the formation of islands of increasing height. The beta-FeSi2 filMS grown are composites of two azimuthal orientations with respect to the substrate: The predominant A orientation with beta-FeSi2 [010] parallel-to Si [110] and the B orientation with beta-FeSi2 [010] parallel-to Si [100]. The lattice strain in the films is partially relaxed. At the interface, the Fe atoms are found to be displaced from bulk lattice sites. These displacements are thought to be associated with the formation of atomic bonds at the interface of the dissimilar beta-FeSi2(100) and Si(001) lattices.

引用

页码：1104 / 1109

页数：6

共 31 条

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