AFM FABRICATION OF SUB-10-NANOMETER METAL-OXIDE DEVICES WITH IN-SITU CONTROL OF ELECTRICAL-PROPERTIES

被引:243
作者
SNOW, ES [1 ]
CAMPBELL, PM [1 ]
机构
[1] USN, RES LAB, WASHINGTON, DC 20375 USA
关键词
D O I
10.1126/science.270.5242.1639
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Metal wires and metal-oxide-metal junctions were fabricated by anodic oxidation with the conducting tip of an atomic force microscope (AFM). The width of the wires and resistance of the junctions were controlled by real-time, in situ measurement of the device resistance during fabrication. Because the properties of nanometer-scale devices are very sensitive to size variations, such measurements provide a more accurate method of controlling device properties than by controlling geometry alone. In this way, structures with critical dimensions of less than IO nanometers were fabricated with precisely tailored electrical properties.
引用
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页码:1639 / 1641
页数:3
相关论文
共 12 条
  • [1] FABRICATION OF NANOMETER-SCALE SIDE-GATED SILICON FIELD-EFFECT TRANSISTORS WITH AN ATOMIC-FORCE MICROSCOPE
    CAMPBELL, PM
    SNOW, ES
    MCMARR, PJ
    [J]. APPLIED PHYSICS LETTERS, 1995, 66 (11) : 1388 - 1390
  • [2] MODIFICATION OF HYDROGEN-PASSIVATED SILICON BY A SCANNING TUNNELING MICROSCOPE OPERATING IN AIR
    DAGATA, JA
    SCHNEIR, J
    HARARY, HH
    EVANS, CJ
    POSTEK, MT
    BENNETT, J
    [J]. APPLIED PHYSICS LETTERS, 1990, 56 (20) : 2001 - 2003
  • [3] INSITU VAPORIZATION OF VERY LOW-MOLECULAR WEIGHT RESISTS USING 1-2 NM DIAMETER ELECTRON-BEAMS
    ISAACSON, M
    MURRAY, A
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1117 - 1120
  • [4] Application of STM Nanometer-Size Oxidation Process to Planar-Type MIM Diode
    MATSUMOTO, K
    TAKAHASHI, S
    ISHII, M
    HOSHI, M
    KUROKAWA, A
    ICHIMURA, S
    ANDO, A
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1995, 34 (2B): : 1387 - 1390
  • [5] MATSUMOTO K, 1995, 53RD DEV RES C CHARL
  • [6] FABRICATION OF 0.1-MU-M METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH THE ATOMIC-FORCE MICROSCOPE
    MINNE, SC
    SOH, HT
    FLUECKIGER, P
    QUATE, CF
    [J]. APPLIED PHYSICS LETTERS, 1995, 66 (06) : 703 - 705
  • [7] PROPERTIES OF METALLIC NANOWIRES - FROM CONDUCTANCE QUANTIZATION TO LOCALIZATION
    PASCUAL, JI
    MENDEZ, J
    GOMEZHERRERO, J
    BARO, AM
    GARCIA, N
    LANDMAN, U
    LUEDTKE, WD
    BOGACHEK, EN
    CHENG, HP
    [J]. SCIENCE, 1995, 267 (5205) : 1793 - 1795
  • [8] FABRICATION OF SI NANOSTRUCTURES WITH AN ATOMIC-FORCE MICROSCOPE
    SNOW, ES
    CAMPBELL, PM
    [J]. APPLIED PHYSICS LETTERS, 1994, 64 (15) : 1932 - 1934
  • [9] SI NANOSTRUCTURES FABRICATED BY ANODIC-OXIDATION WITH AN ATOMIC-FORCE MICROSCOPE AND ETCHING WITH AN ELECTRON-CYCLOTRON-RESONANCE SOURCE
    SNOW, ES
    JUAN, WH
    PANG, SW
    CAMPBELL, PM
    [J]. APPLIED PHYSICS LETTERS, 1995, 66 (14) : 1729 - 1731
  • [10] SNOW ES, 1995, FABRICATION PATTERNI, V380, P131