INELASTIC ELECTRON-SCATTERING FROM CLEAN AND ARSENIC-OVERCOATED GAAS(100)

[1] VAPOR-PHASE RAMAN-SPECTRA, RAMAN BAND CONTOUR ANALYSES, AND CORIOLIS CONSTANTS OF SPHERICAL TOP MOLECULES MF6 (M=S, SE, TE, MO, W, OR U), M(CH3)4 (M=C, SI, GE, SN, OR PB), P4, AS4, AND OSO4 [J]. JOURNAL OF MOLECULAR SPECTROSCOPY, 1973, 46 (02) : 240 - 255

[2] INFRARED SPECTRUM OF CONDENSED AS4 AND THERMODYNAMIC FUNCTIONS OF AS4 GAS [J]. JOURNAL OF MOLECULAR SPECTROSCOPY, 1970, 33 (03) : 525 - +

[3] THEORETICAL-STUDY OF THE ATOMIC AND ELECTRONIC-STRUCTURE OF THE CIS-4X4 RECONSTRUCTED GAAS(100)SURFACE [J]. SURFACE SCIENCE, 1982, 120 (01) : L425 - L430

[4] ATOMIC-STRUCTURE OF GAAS(100)-(2X1) AND GAAS(100)-(2X4) RECONSTRUCTED SURFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 834 - 837

[5] ANGLE-RESOLVED PHOTOEMISSION-STUDIES OF GAAS(100) SURFACES GROWN BY MOLECULAR-BEAM EPITAXY [J]. PHYSICAL REVIEW B, 1983, 27 (08): : 4770 - 4778

[6] ARSENIC ON GAAS - FERMI-LEVEL PINNING AND THERMAL-DESORPTION STUDIES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1989, 7 (03): : 724 - 730

[7] A HIGH-RESOLUTION EELS STUDY OF FREE-CARRIER VARIATIONS IN H2+/H+ BOMBARDED (100)GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 101 - 106

[8] ELECTRON-ENERGY-LOSS STUDY OF THE SPACE-CHARGE REGION AT SEMICONDUCTOR SURFACES [J]. PHYSICAL REVIEW B, 1987, 35 (17): : 9128 - 9134

[9] INELASTIC-SCATTERING OF ELECTRONS FROM IONIC-CRYSTALS WITH A HIGHLY CONDUCTING OVERLAYER [J]. PHYSICAL REVIEW B, 1984, 29 (06): : 3208 - 3216

[10] Huber KP, 1979, MOL SPECTRA MOL STRU, VIV, P38

[1] VAPOR-PHASE RAMAN-SPECTRA, RAMAN BAND CONTOUR ANALYSES, AND CORIOLIS CONSTANTS OF SPHERICAL TOP MOLECULES MF6 (M=S, SE, TE, MO, W, OR U), M(CH3)4 (M=C, SI, GE, SN, OR PB), P4, AS4, AND OSO4 [J]. JOURNAL OF MOLECULAR SPECTROSCOPY, 1973, 46 (02) : 240 - 255

[2] INFRARED SPECTRUM OF CONDENSED AS4 AND THERMODYNAMIC FUNCTIONS OF AS4 GAS [J]. JOURNAL OF MOLECULAR SPECTROSCOPY, 1970, 33 (03) : 525 - +

[3] THEORETICAL-STUDY OF THE ATOMIC AND ELECTRONIC-STRUCTURE OF THE CIS-4X4 RECONSTRUCTED GAAS(100)SURFACE [J]. SURFACE SCIENCE, 1982, 120 (01) : L425 - L430

[4] ATOMIC-STRUCTURE OF GAAS(100)-(2X1) AND GAAS(100)-(2X4) RECONSTRUCTED SURFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 834 - 837

[5] ANGLE-RESOLVED PHOTOEMISSION-STUDIES OF GAAS(100) SURFACES GROWN BY MOLECULAR-BEAM EPITAXY [J]. PHYSICAL REVIEW B, 1983, 27 (08): : 4770 - 4778

[6] ARSENIC ON GAAS - FERMI-LEVEL PINNING AND THERMAL-DESORPTION STUDIES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1989, 7 (03): : 724 - 730

[7] A HIGH-RESOLUTION EELS STUDY OF FREE-CARRIER VARIATIONS IN H2+/H+ BOMBARDED (100)GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 101 - 106

[8] ELECTRON-ENERGY-LOSS STUDY OF THE SPACE-CHARGE REGION AT SEMICONDUCTOR SURFACES [J]. PHYSICAL REVIEW B, 1987, 35 (17): : 9128 - 9134

[9] INELASTIC-SCATTERING OF ELECTRONS FROM IONIC-CRYSTALS WITH A HIGHLY CONDUCTING OVERLAYER [J]. PHYSICAL REVIEW B, 1984, 29 (06): : 3208 - 3216

[10] Huber KP, 1979, MOL SPECTRA MOL STRU, VIV, P38