ELECTRON-ENERGY-LOSS STUDY OF THE SPACE-CHARGE REGION AT SEMICONDUCTOR SURFACES

被引：29

作者：

DUBOIS, LH ^{[1
]}

ZEGARSKI, BR ^{[1
]}

PERSSON, BNJ ^{[1
]}

机构：

[1] FORSCHUNGSZENTRUM JULICH, INST FESTKORPERFORSCH, D-5170 JULICH 1, FED REP GER

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.35.9128

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：9128 / 9134

页数：7

共 29 条

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[2] BLAKEMORE JS, 1982, J APPL PHYS, V53, pR133
[3] ANGLE-RESOLVED PHOTOEMISSION-STUDIES OF GAAS(100) SURFACES GROWN BY MOLECULAR-BEAM EPITAXY
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[4] HIGH-RESOLUTION ELECTRON-ENERGY LOSS STUDIES OF FERMI LEVEL STATES OF CLEAN AND METALLIZED SI(111) SURFACES
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 384 - 389
[5] A HIGH-RESOLUTION EELS STUDY OF FREE-CARRIER VARIATIONS IN H2+/H+ BOMBARDED (100)GAAS
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 101 - 106
[6] SURFACE OPTICAL PHONONS AND HYDROGEN CHEMISORPTION ON POLAR AND NON-POLAR FACES OF GAAS, INP, AND GAP
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[J]. PHYSICAL REVIEW B, 1982, 26 (02): : 794 - 802
[7] INELASTIC-SCATTERING OF ELECTRONS FROM IONIC-CRYSTALS WITH A HIGHLY CONDUCTING OVERLAYER
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CAMLEY, RE
MILLS, DL
[J]. PHYSICAL REVIEW B, 1984, 29 (06): : 3208 - 3216
[8] EFFECTS OF AN ION-BOMBARDMENT ON CHARACTERISTICS OF A METAL/N-GAAS TUNNEL CONTACT
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SCHREDER, G
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (02) : 549 - &
[9] HARRIS JS, 1969, J APPL PHYS, V40, P4574
[10] ELECTRONIC-STRUCTURE OF SI(111) SURFACES
HIMPSEL, FJ
FAUSTER, T
HOLLINGER, G
[J]. SURFACE SCIENCE, 1983, 132 (1-3) : 22 - 30

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