ON THE THERMAL-STABILITY OF COPPER-DEPOSITS ON A (0001) SAPPHIRE SURFACE

被引：35

作者：

GUO, QL ^{[1
]}

MOLLER, PJ ^{[1
]}

机构：

[1] UNIV COPENHAGEN,HC ORSTED INST,PHYS CHEM LAB,DK-2100 COPENHAGEN,DENMARK

来源：

SURFACE SCIENCE | 1991年 / 244卷 / 03期

关键词：

D O I：

10.1016/0039-6028(91)90496-F

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The thermal stability of copper depositied on a sapphire, alpha-Al2O3(0001)-1 x 1 substrate in UHV has been studied by Auger electron spectroscopy and electron energy-loss spectroscopy. The results indicate formation of a bond between the initially deposited copper and oxygen sites, and a Cu(I) state. The ultrathin Cu films, deposited upon room-temperature substrates, are stable on the substrate at temperatures below 430-degrees-C. For comparison, an ultraviolet photoelectron spectroscopy study was made on Cu deposited on Al2O3/Al(111).

引用

页码：228 / 236

页数：9

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