SILICON-ON-SAPPHIRE EPITAXY BY VACUUM SUBLIMATION - LEED-AUGER STUDIES AND ELECTRONIC PROPERTIES OF FILMS

被引：94

作者：

CHANG, CC

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1971年 / 8卷 / 03期

关键词：

D O I：

10.1116/1.1314585

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：500 / &

共 41 条

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