EPITAXY OF SILICON ON ALUMINA-STRUCTURAL EFFECTS

[1] EPITAXIAL DEPOSITION OF SILICON ON QUARTZ [J]. PHILOSOPHICAL MAGAZINE, 1964, 9 (102): : 965 - &

[2] ETTER PJ, 1965, C NONMETALLIC THIN F

[3] Use of sealed tubes for the preparation of acid solutions of samples for analysis, or for small-scale refining pressures of acids heated above 100 degrees C [J]. JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS, 1944, 33 (06): : 457 - 470

[4] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +

[5] IMPURITY REDISTRIBUTION PROCESSES IN EPITAXIAL SILICON LAYERS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (11) : 1100 - &

[6] EPITAXIAL GROWTH OF SILICON FROM THE PYROLYSIS OF MONOSILANE ON SILICON SUBSTRATES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (12) : 1235 - 1240

[7] JOYCE BA, 1965, T METALL SOC AIME, V233, P556

[8] SINGLE-CRYSTAL SILICON ON SAPPHIRE SUBSTRATE [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (04) : 1349 - &

[9] MANASEVIT HM, 1965, T METALL SOC AIME, V233, P540

[10] GROWN-FILM SILICON TRANSISTORS ON SAPPHIRE [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (12) : 1487 - &

[1] EPITAXIAL DEPOSITION OF SILICON ON QUARTZ [J]. PHILOSOPHICAL MAGAZINE, 1964, 9 (102): : 965 - &

[2] ETTER PJ, 1965, C NONMETALLIC THIN F

[3] Use of sealed tubes for the preparation of acid solutions of samples for analysis, or for small-scale refining pressures of acids heated above 100 degrees C [J]. JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS, 1944, 33 (06): : 457 - 470

[4] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +

[5] IMPURITY REDISTRIBUTION PROCESSES IN EPITAXIAL SILICON LAYERS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (11) : 1100 - &

[6] EPITAXIAL GROWTH OF SILICON FROM THE PYROLYSIS OF MONOSILANE ON SILICON SUBSTRATES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (12) : 1235 - 1240

[7] JOYCE BA, 1965, T METALL SOC AIME, V233, P556

[8] SINGLE-CRYSTAL SILICON ON SAPPHIRE SUBSTRATE [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (04) : 1349 - &

[9] MANASEVIT HM, 1965, T METALL SOC AIME, V233, P540

[10] GROWN-FILM SILICON TRANSISTORS ON SAPPHIRE [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (12) : 1487 - &