LEED STUDIES OF (0001) FACE OF ALPHA-ALUMINA

被引:103
作者
CHANG, CC
机构
关键词
D O I
10.1063/1.1656015
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:5570 / &
相关论文
共 9 条
[1]
EPITAXY OF SILICON ON ALUMINA-STRUCTURAL EFFECTS [J].
BICKNELL, RW ;
JOYCE, BA ;
NEAVE, JH ;
SMITH, GV .
PHILOSOPHICAL MAGAZINE, 1966, 14 (127) :31-&
[2]
CHANG CC, 1968, 4 P INT MAT S BERK
[3]
LOW-ENERGY ELECTRON DIFFRACTION OBSERVATIONS OF ALPHA-ALUMINA [J].
CHARIG, JM .
APPLIED PHYSICS LETTERS, 1967, 10 (05) :139-&
[4]
MULLER K, 1968, SURF SCI, V8, P455
[5]
NABER CT, 1968, T MET SOC AIME
[6]
NEWNHAM RE, 1962, Z KRISTALLOGRAPHIE, V0117
[7]
NOLDER R, 1965, T METALL SOC AIME, V233, P549
[8]
A LOW-ENERGY ELECTRON DIFFRACTION STUDY OF EPITAXIAL SILICON LAYERS ON A GE(111) SURFACE [J].
TAKEISHI, Y ;
SASAKI, I ;
HIRABAYASHI, K .
APPLIED PHYSICS LETTERS, 1967, 11 (10) :330-+
[9]
A NEW MECHANISM FOR STACKING FAULT GENERATION IN EPITAXIAL GROWTH OF SILICON IN ULTRA-HIGH VACUUM [J].
THOMAS, RN ;
FRANCOMBE, MH .
APPLIED PHYSICS LETTERS, 1967, 11 (04) :134-+