RESIDUAL ACCEPTORS IN NATURAL GASB AND GAXIN1-XSB - THEIR CONTRIBUTION TO TRANSPORT BETWEEN 4.7 AND 300 DEGREES K

被引：26

作者：

CAMPOS, MD ^{[1
]}

GOUSKOV, A ^{[1
]}

GOUSKOV, L ^{[1
]}

PONS, JC ^{[1
]}

机构：

[1] UNIV SCI & TECH LANGUEDOC,CNRS,CTR ETUD ELECTR SOLIDES,LAB PHYS SOLIDES,MONTPELLIER 34060,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 06期

关键词：

D O I：

10.1063/1.1662627

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2642 / 2646

页数：5

共 27 条

[1]

ALEGRE J, 1970, THESIS U SCIENCES TE

[2] ION-PAIRING BETWEEN LITHIUM AND RESIDUAL ACCEPTORS IN GASB [J].

BAXTER, RD ;

BATE, RT ;

REID, FJ .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (01) :41-&

[3] ELECTRON MOBILITY IN GASB AT 77 DEGREES K [J].

BAXTER, RD ;

REID, FJ ;

BEER, AC .

PHYSICAL REVIEW, 1967, 162 (03) :718-&

[4]

CAMPOS MD, 1969, PHYS STATUS SOLIDI, V35, P635

[5]

CAMPOS MD, 1970, PHYS STATUS SOLIDI A, V2, P779

[6]

CODERRE M, 1969, CAN J PHYS, V47, P2553

[7] ELECTRICAL PROPERTIES OF GALLIUM ANTIMONIDE [J].

DETWILER, DP .

PHYSICAL REVIEW, 1955, 97 (06) :1575-1578

[8] INVESTIGATION INTO APPARENT PURITY LIMIT IN GASB [J].

EFFER, D ;

ETTER, PJ .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (05) :451-&

[9]

HABEGGER MA, 1965, PHYS REV, V138, P598

[10]

JAKOWETZ W, TO BE PUBLISHED

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