HOT-ELECTRON FLOW IN AN INHOMOGENEOUS FIELD

[1] BUTURLA EM, 1984, IBM J RES DEV, V44, P1064

[2] TWO-DIMENSIONAL NUMERICAL-SIMULATION OF ENERGY-TRANSPORT EFFECTS IN SI AND GAAS-MESFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) : 970 - 977

[3] DUMKE WP, UNPUB

[4] REVIEW OF SOME CHARGE TRANSPORT PROPERTIES OF SILICON [J]. SOLID-STATE ELECTRONICS, 1977, 20 (02) : 77 - 89

[5] GENERALIZATION OF FICKS LAW FOR NONLOCAL COMPLEX DIFFUSION IN SEMICONDUCTORS [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1974, 65 (01): : 61 - 65

[6] PRICE PJ, IN PRESS J APPL PHYS

[7] REGGIANI L, 1985, HOT ELECTRON TRANSPO

[8] DIFFUSION OF HOT AND COLD ELECTRONS IN SEMICONDUCTOR BARRIERS [J]. PHYSICAL REVIEW, 1962, 126 (06): : 2002 - &

[9] Thornber K. K., 1982, IEEE Electron Device Letters, VEDL-3, P69, DOI 10.1109/EDL.1982.25482

[10] WARRINER RA, 1977, SOLID STATE ELECTRON, V1, P105

[1] BUTURLA EM, 1984, IBM J RES DEV, V44, P1064

[2] TWO-DIMENSIONAL NUMERICAL-SIMULATION OF ENERGY-TRANSPORT EFFECTS IN SI AND GAAS-MESFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) : 970 - 977

[3] DUMKE WP, UNPUB

[4] REVIEW OF SOME CHARGE TRANSPORT PROPERTIES OF SILICON [J]. SOLID-STATE ELECTRONICS, 1977, 20 (02) : 77 - 89

[5] GENERALIZATION OF FICKS LAW FOR NONLOCAL COMPLEX DIFFUSION IN SEMICONDUCTORS [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1974, 65 (01): : 61 - 65

[6] PRICE PJ, IN PRESS J APPL PHYS

[7] REGGIANI L, 1985, HOT ELECTRON TRANSPO

[8] DIFFUSION OF HOT AND COLD ELECTRONS IN SEMICONDUCTOR BARRIERS [J]. PHYSICAL REVIEW, 1962, 126 (06): : 2002 - &

[9] Thornber K. K., 1982, IEEE Electron Device Letters, VEDL-3, P69, DOI 10.1109/EDL.1982.25482

[10] WARRINER RA, 1977, SOLID STATE ELECTRON, V1, P105