REVIEW OF SOME CHARGE TRANSPORT PROPERTIES OF SILICON

被引：868

作者：

JACOBONI, C ^{[1
]}

CANALI, C ^{[1
]}

OTTAVIANI, G ^{[1
]}

QUARANTA, AA ^{[1
]}

机构：

[1] UNIV MODENA, IST FIS, I-41100 MODENA, ITALY

来源：

SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 02期

关键词：

D O I：

10.1016/0038-1101(77)90054-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：77 / 89

页数：13

相关论文

共 99 条

[1] MEASUREMENTS OF CURRENT-FIELD STRENGTH CHARACTERISTIC OF N-TYPE GALLIUM ARSENIDE USING VARIOUS HIGH-POWER MICROWAVE TECHNIQUES
ACKET, GA
DEGROOT, J
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (09) : 505 - +
[2] CURRENT OSCILLATIONS IN N-TYPE SILICON
ASCHE, M
SARBEI, OG
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 8 (01): : K61 - &
[3] ABHANGIGKEIT DER ANISOTROPIE DER ELEKTRISCHEN LEITFAHIGKEIT DES SILIZIUMS VOM ELEKTRISCHEN FELD
ASCHE, M
BOITSCHE.BL
SARBEJ, OG
[J]. PHYSICA STATUS SOLIDI, 1965, 9 (02): : 323 - &
[4] CONDUCTIVITY OF HOT ELECTRONS IN N-SI AT LIQUID NEON TEMPERATURE
ASCHE, M
SARBEI, OG
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1971, 46 (02): : K121 - &
[5] CURRENT TRANSPORT IN NARROW-BASE TRANSISTORS
BACCARANI, G
JACOBONI, C
MAZZONE, AM
[J]. SOLID-STATE ELECTRONICS, 1977, 20 (01) : 5 - 10
[6] ELECTRON-MOBILITY EMPIRICALLY RELATED TO PHOSPHORUS CONCENTRATION IN SILICON
BACCARANI, G
OSTOJA, P
[J]. SOLID-STATE ELECTRONICS, 1975, 18 (06) : 579 - 580
[7] DRIFT VELOCITY SATURATION IN MOS TRANSISTORS
BAUM, G
BENEKING, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (06) : 481 - +
[8] BOICHENK.BL, 1966, FIZ TVERD TELA+, V7, P1631
[9] DEVIATIONS FROM OHMS LAW IN GERMANIUM AND SILICON
BROWN, MACS
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 19 (3-4) : 218 - 227
[10] BUTCHER PN, 1973, ELECT CRYSTALLINE SO, P103

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