MEASUREMENTS OF CURRENT-FIELD STRENGTH CHARACTERISTIC OF N-TYPE GALLIUM ARSENIDE USING VARIOUS HIGH-POWER MICROWAVE TECHNIQUES

被引：37

作者：

ACKET, GA

DEGROOT, J

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1967年 / ED14卷 / 09期

关键词：

D O I：

10.1109/T-ED.1967.15995

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：505 / +

页数：1

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[1] DETERMINATION OF NEGATIVE DIFFERENTIAL MOBILITY OF N-TYPE GALLIUM ARSENIDE USING 8MM-MICROWAVES
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[2] BEHAVIOUR OF N-TYPE GALLIUM ARSENIDE IN STRONG MICROWAVE FIELDS
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[3] VELOCITY-FIELD CHARACTERISTIC OF GALLIUM ARSENIDE FROM MEASUREMENT OF CONDUCTIVITY IN A MICROWAVE FIELD
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[5] VARIATION OF DRIFT VELOCITY WITH FIELD IN GAAS
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[8] INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS
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[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (02) : 141 - &
[9] MEASUREMENT OF NEGATIVE DIFFERENTIAL MOBILITY OF ELECTRONS IN GAAS
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[J]. PHYSICS LETTERS, 1966, 22 (04): : 369 - +
[10] MICROWAVE MEASUREMENT OF DIFFERENTIAL NEGATIVE CONDUCTIVITY DUE TO INTERVALLEY TRANSFER OF HOT ELECTRONS IN N-TYPE GAAS
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[J]. PHYSICS LETTERS A, 1967, A 24 (10) : 500 - +