VARIATION OF DRIFT VELOCITY WITH FIELD IN GAAS

被引：24

作者：

CONWELL, EM

VASSELL, MO

机构：

来源：

APPLIED PHYSICS LETTERS | 1966年 / 9卷 / 11期

关键词：

D O I：

10.1063/1.1754633

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：411 / +

页数：1

相关论文

共 15 条

[1] INTERVALLEY TRANSFER OF HOT ELECTRONS IN GALLIUM ARSENIDE
BUTCHER, PN
FAWCETT, W
[J]. PHYSICS LETTERS, 1965, 17 (03): : 216 - &
[2] INTERVALLEY TRANSFER MECHANISM OF NEGATIVE RESISTIVITY IN BULK SEMICONDUCTORS
BUTCHER, PN
FAWCETT, W
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1965, 86 (554P): : 1205 - &
[3] INFRARED RADIATION FROM BULK GAAS - (DC PULSE EXCITATION - 9000 A - E)
CHANG, KKN
LIU, SG
PRAGER, HJ
[J]. APPLIED PHYSICS LETTERS, 1966, 8 (08) : 196 - &
[4] FIELD DEPENDENCE OF MOBILITY IN (100) CONDUCTION BAND MINIMA OF GAAS
CONWELL, EM
[J]. PHYSICS LETTERS, 1966, 21 (04): : 368 - +
[5] HIGH-FIELD DISTRIBUTION FUNCTION IN GAAS
CONWELL, EM
VASSELL, MO
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 22 - +
[6] SWITCHING AND LOW-FIELD BREAKDOWN IN N-GAAS BULK DIODES
COPELAND, JA
[J]. APPLIED PHYSICS LETTERS, 1966, 9 (04) : 140 - +
[7] COPELAND JA, TO BE PUBLISHED
[8] BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS
EHRENREICH, H
[J]. PHYSICAL REVIEW, 1960, 120 (06): : 1951 - 1963
[9] ELECTRON SCATTERING MECHANISMS IN N-TYPE EPITAXIAL CAP
EPSTEIN, AS
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (10) : 1611 - &
[10] INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS
GUNN, JB
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (02) : 141 - &