DEPENDENCE OF EMISSION WAVELENGTH ON CAVITY LENGTH AND FACET REFLECTIVITIES IN MULTIPLE QUANTUM WELL SEMICONDUCTOR-LASERS

被引：6

作者：

WILCOX, JZ

OU, S

YANG, JJ

JANSEN, M

PETERSON, GL

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 22期

关键词：

D O I：

10.1063/1.101156

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2174 / 2176

页数：3

共 11 条

[1]

AGRAWAL GP, 1986, LONG WAVELENGTH SEMI, P372

[2] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT IN GAAS/ALGAAS QUANTUM WELL LASERS [J].

BLOOD, P ;

COLAK, S ;

KUCHARSKA, AI .

APPLIED PHYSICS LETTERS, 1988, 52 (08) :599-601

[3] A MODEL FOR GRIN-SCH-SQW DIODE-LASERS [J].

CHINN, SR ;

ZORY, PS ;

REISINGER, AR .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (11) :2191-2214

[4]

GOBEL EO, 1985, APPL PHYS LETT, V47, P781, DOI 10.1063/1.96036

[5] 2ND QUANTIZED STATE LASING OF A CURRENT PUMPED SINGLE QUANTUM-WELL LASER [J].

MITTELSTEIN, M ;

ARAKAWA, Y ;

LARSSON, A ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1986, 49 (25) :1689-1691

[6]

OU SS, 1988, ELECTRON LETT, V24, P953

[7] CAVITY LENGTH DEPENDENCE OF THE THRESHOLD BEHAVIOR IN THIN QUANTUM-WELL SEMICONDUCTOR-LASERS [J].

REISINGER, AR ;

ZORY, PS ;

WATERS, RG .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (06) :993-999

[8]

SHEALY JR, 1987, APPL PHYS LETT, V50, P1635

[9] CARRIER-INDUCED LASING WAVELENGTH SHIFT FOR QUANTUM-WELL LASER-DIODES [J].

TOMITA, A ;

SUZUKI, A .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (07) :1155-1159

[10] LENGTH DEPENDENCE OF THRESHOLD CURRENT IN MULTIPLE QUANTUM WELL LASERS [J].

WILCOX, JZ ;

PETERSON, GL ;

OU, S ;

YANG, JJ ;

JANSEN, M ;

SCHECHTER, D .

ELECTRONICS LETTERS, 1988, 24 (19) :1218-1220

← 1 2 →