WANNIER EXCITONS IN ASYMMETRICAL QUANTUM-WELL STRUCTURES

被引：4

作者：

BELYAVSKY, VI ^{[1
]}

KOPAEV, YV ^{[1
]}

SHEVTSOV, SV ^{[1
]}

机构：

[1] PN LEBEDEV PHYS INST,MOSCOW 117924,RUSSIA

来源：

SOLID STATE COMMUNICATIONS | 1995年 / 94卷 / 09期

关键词：

QUANTUM WELLS; SEMICONDUCTORS; OPTICAL PROPERTIES;

D O I：

10.1016/0038-1098(95)00158-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Binding energies of excitons in asymmetrical quantum well systems are calculated by a perturbative approach based on the effective-mass approximation in the envelope function scheme. We studied the effects of a composition, a longitudinal uniform electric field and geometrical parameters of AlxGa1-xAs/GaAs quantum well structures on the exciton binding energies. It is shown that, in specially selected structures, certain excitons may be absent inside rather wide domains of a composition or an electric field.

引用

页码：715 / 718

页数：4

共 8 条

[1]

ALTARELLI M, 1988, SPRINGER P PHYSICS, P170

[2] ACCURATE THEORY OF EXCITONS IN GAAS-GA1-XALXAS QUANTUM-WELLS [J].