A NOVEL PERTURBATIVE-VARIATIONAL APPROACH AND ITS APPLICATION TO THE IMPURITY STATES IN ANISOTROPIC CRYSTALS

被引:55
作者
LEE, YC [1 ]
MEI, WN [1 ]
LIU, KC [1 ]
机构
[1] USN,RES LAB,WASHINGTON,DC 20375
来源
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1982年 / 15卷 / 14期
关键词
D O I
10.1088/0022-3719/15/14/006
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:L469 / L477
页数:9
相关论文
共 7 条
[1]  
FAULKNER RA, 1968, PHYS REV, V175, P99
[2]   THEORY OF DONOR LEVELS IN SILICON [J].
KOHN, W .
PHYSICAL REVIEW, 1955, 97 (06) :1721-1721
[3]   THEORY OF DONOR STATES IN SILICON [J].
KOHN, W ;
LUTTINGER, JM .
PHYSICAL REVIEW, 1955, 98 (04) :915-922
[4]   SHALLOW IMPURITY STATES IN SILICON AND GERMANIUM [J].
KOHN, W .
SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1957, 5 :257-320
[5]   WANNIER EXCITONS IN A THIN CRYSTAL FILM [J].
LEE, YC ;
LIN, DL .
PHYSICAL REVIEW B, 1979, 19 (04) :1982-1989
[6]   PERTURBATIVE APPROACH TO IMPURITY STATES IN ANISOTROPIC CRYSTALS [J].
MEI, WN ;
LEE, YC .
PHYSICA B & C, 1979, 98 (1-2) :21-27
[7]   THE THEORY OF IMPURITY CONDUCTION [J].
MOTT, NF ;
TWOSE, WD .
ADVANCES IN PHYSICS, 1961, 10 (38) :107-163