THE MULTISTABLE CHARGE-CONTROLLED MEMORY EFFECT IN SOI MOS-TRANSISTORS AT LOW-TEMPERATURES

A new phenomenon, called the“ MCCM” (Multistable Charge-Controlled Memory) effect is observed in SOI MOS transistors working at low temperatures. This MCCM effect essentially results in a controllable setting of the transistor threshold voltage by applying adequate voltage pulses (or up-down voltage sweeps) to one or more electrodes of the structure. A change in threshold voltage of several volts can be obtained. Stability in the order of hours and longer, depending on temperature and operational conditions, is observed. The physics behind the MCCM effect is discussed and a simple analytical model is proposed. Finally, some new applications based on the MCCM effect are briefly highlighted. © 1990 IEEE