PREPARATION OF CUINSE2 FILMS BY SELENIZATION OF CUIN PRECURSOR IN VACUUM CHAMBER

被引：2

作者：

GUPTA, A ^{[1
]}

OHNO, T ^{[1
]}

KARIYA, T ^{[1
]}

SHIRAKATA, S ^{[1
]}

ISOMURA, S ^{[1
]}

机构：

[1] KOCHI UNIV,FAC SCI,KOCHI 780,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷

关键词：

COPPER INDIUM DISELENIDE; THIN FILM; CHALCOPYRITE; SELENIZATION; PRECURSOR; ADHESION;

D O I：

10.7567/JJAPS.32S3.74

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

CuInSe2 thin films were prepared on SiO2-coated sodalime glass substrate by the selenization of precursors in vacuum chamber. The deposition of In/Cu precursors was carried out with varying substrate temperature. Cu-In (In/Cu and Cu/In) precursors with or without thin Se layer (100 angstrom) were also prepared by varying stacking sequence of Cu and In. The structure and the morphology of In/Cu precursors have been investigated. It was found that the adhesive property of the CuInSe, film to the substrate strongly depends on precursor preparation conditions.

引用

页码：74 / 76

页数：3

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