THE IMPACT OF DEVICE SCALING ON THE CURRENT FLUCTUATIONS IN MOSFETS

被引：96

作者：

TSAI, MH

MA, TP

机构：

[1] YALE UNIV,CTR MICROELECTR MAT & STRUCT,NEW HAVEN,CT 06520

[2] YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 11期

关键词：

D O I：

10.1109/16.333823

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The impact of device scaling on modern MOS technology is discussed in terms of the random telegraph signals and 1/f noise in MOSFET's. In addition to the more obvious effects of enhanced current fluctuations as the device is scaled down, we will show the influence of nonuniform distribution of threshold voltages along the channel in the context of device scaling. The role of fast interface states on the drain current fluctuations will also be discussed. It will be shown that, compared to the oxide traps, fast interface states give rise to higher-frequency RTS and 1/f noise, and that they become more important for devices operating in weak inversion.

引用

收藏

页码：2061 / 2068

页数：8

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