MODELING OF THE 1/F NOISE OVERSHOOT IN SHORT-CHANNEL MOSFETS LOCALLY DEGRADED BY HOT-CARRIER INJECTION

被引：11

作者：

BOUKRISS, B

HADDARA, H

CRISTOLOVEANU, S

CHOVET, A

机构：

[1] AIN SHAMS UNIV,DEPT ELECTR & COMP ENGN,CAIRO,EGYPT

[2] UNIV MARYLAND,DEPT ELECT ENGN,COLLEGE PK,MD 20742

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 10期

关键词：

D O I：

10.1109/55.43091

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：433 / 436

页数：4

共 9 条

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[6] HOT-ELECTRON RELIABILITY OF DEEP SUB-MICRON MOS-TRANSISTORS [J].

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[7] ANALYSIS OF MOSFET DEGRADATION DUE TO HOT-ELECTRON STRESS IN TERMS OF INTERFACE-STATE AND FIXED-CHARGE GENERATION [J].

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[8] ELECTRON-MOBILITY IN INVERSION AND ACCUMULATION LAYERS ON THERMALLY OXIDIZED SILICON SURFACES [J].

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[9]

Sze S. M., 1981, PHYSICS SEMICONDUCTO

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