EFFECTS OF LOCALIZED INTERFACE DEFECTS CAUSED BY HOT-CARRIER STRESS IN N-CHANNEL MOSFETS AT LOW-TEMPERATURE

被引：11

作者：

NGUYENDUC, C ^{[1
]}

CRISTOLOVEANU, S ^{[1
]}

REIMBOLD, G ^{[1
]}

机构：

[1] CEN,LETI,F-38041 GRENOBLE,FRANCE

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 09期

关键词：

D O I：

10.1109/55.6951

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：479 / 481

页数：3

相关论文

共 11 条

[1] PERFORMANCE AND HOT-CARRIER EFFECTS OF SMALL CRYO-CMOS DEVICES
AOKI, M
HANAMURA, S
MASUHARA, T
YANO, K
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (01) : 8 - 18
[2] BERGONZONI C, 1987, 17TH P ESSDERC C BOL, P721
[3] ANALYZING HOT-CARRIER EFFECTS ON COLD CMOS DEVICES
BIBYK, SB
WANG, H
BORTON, P
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (01) : 83 - 88
[4] TWO-DIMENSIONAL MODELING OF LOCALLY DAMAGED SHORT-CHANNEL MOSFETS OPERATING IN THE LINEAR REGION
HADDARA, H
CRISTOLOVEANU, S
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (02) : 378 - 385
[5] HOT-ELECTRON AND HOLE-EMISSION EFFECTS IN SHORT N-CHANNEL MOSFETS
HOFMANN, KR
WERNER, C
WEBER, W
DORDA, G
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (03) : 691 - 699
[6] EFFECTS OF HOT-CARRIER TRAPPING IN N-CHANNEL AND P-CHANNEL MOSFETS
NG, KK
TAYLOR, GW
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (08) : 871 - 876
[7] THERMAL REEMISSION OF TRAPPED ELECTRONS IN SIO2
NING, TH
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) : 5997 - 6003
[8] NING TH, 1979, IEEE T ELECTRON DEVI, V26, P436
[9] SCHWERIN A, 1987, 17TH P ESSDERC C BOL, P717
[10] RELATIONSHIP BETWEEN HOT-ELECTRONS HOLES AND DEGRADATION OF P-CHANNEL AND N-CHANNEL MOSFETS
TSUCHIYA, T
FREY, J
[J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (01) : 8 - 11