THERMAL REEMISSION OF TRAPPED ELECTRONS IN SIO2

[1] ELECTRON TRAPPING BY RADIATION-INDUCED CHARGE IN MOS DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (03) : 1196 - 1198

[2] ELECTRON TRAPPING IN ELECTRON-BEAM IRRADIATED SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3386 - 3391

[3] IMPURITY CENTERS IN PN JUNCTIONS DETERMINED FROM SHIFTS IN THERMALLY STIMULATED CURRENT AND CAPACITANCE RESPONSE WITH HEATING RATE [J]. SOLID-STATE ELECTRONICS, 1972, 15 (01) : 69 - +

[4] CAPTURE OF ELECTRONS INTO NA+-RELATED TRAPPING SITES IN SIO2 LAYER OF MOS STRUCTURES AT 77 DEGREESK [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) : 2740 - 2743

[5] CAPTURE AND EMISSION OF ELECTRONS AT 2.4-EV-DEEP TRAP LEVEL IN SIO2-FILMS [J]. PHYSICAL REVIEW B, 1975, 11 (12): : 5023 - 5030

[6] FEIGL FJ, 1976, P S THERMAL PHOTOSTI, P118

[7] EFFECTS OF PROCESSING ON HOT-ELECTRON TRAPPING IN SIO2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (01) : 42 - 47

[8] LOW-TEMPERATURE IRRADIATION EFFECTS IN SIO2-INSULATED MIS DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) : 1310 - 1317

[9] THERMAL IONIZATION RATES AND ENERGIES OF HOLES AT DOUBLE ACCEPTOR ZINC CENTERS IN SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 14 (02): : 405 - 415

[10] THERMALLY STIMULATED IONIC-CONDUCTIVITY OF SODIUM IN THERMAL SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (06) : 2583 - 2598

[1] ELECTRON TRAPPING BY RADIATION-INDUCED CHARGE IN MOS DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (03) : 1196 - 1198

[2] ELECTRON TRAPPING IN ELECTRON-BEAM IRRADIATED SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3386 - 3391

[3] IMPURITY CENTERS IN PN JUNCTIONS DETERMINED FROM SHIFTS IN THERMALLY STIMULATED CURRENT AND CAPACITANCE RESPONSE WITH HEATING RATE [J]. SOLID-STATE ELECTRONICS, 1972, 15 (01) : 69 - +

[4] CAPTURE OF ELECTRONS INTO NA+-RELATED TRAPPING SITES IN SIO2 LAYER OF MOS STRUCTURES AT 77 DEGREESK [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) : 2740 - 2743

[5] CAPTURE AND EMISSION OF ELECTRONS AT 2.4-EV-DEEP TRAP LEVEL IN SIO2-FILMS [J]. PHYSICAL REVIEW B, 1975, 11 (12): : 5023 - 5030

[6] FEIGL FJ, 1976, P S THERMAL PHOTOSTI, P118

[7] EFFECTS OF PROCESSING ON HOT-ELECTRON TRAPPING IN SIO2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (01) : 42 - 47

[8] LOW-TEMPERATURE IRRADIATION EFFECTS IN SIO2-INSULATED MIS DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) : 1310 - 1317

[9] THERMAL IONIZATION RATES AND ENERGIES OF HOLES AT DOUBLE ACCEPTOR ZINC CENTERS IN SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 14 (02): : 405 - 415

[10] THERMALLY STIMULATED IONIC-CONDUCTIVITY OF SODIUM IN THERMAL SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (06) : 2583 - 2598