THERMALLY STIMULATED IONIC-CONDUCTIVITY OF SODIUM IN THERMAL SIO2

[1] SURFACE-REACTIONS ON MOS STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (11) : 4888 - 4893

[2] BRAUNLICH P, 1968, THERMOLUMINESCENCE G, P61

[3] IONIC THERMOCURRENTS IN DIELECTRICS [J]. PHYSICAL REVIEW, 1966, 148 (02): : 816 - &

[4] STUDIES OF SODIUM IN SIO2 FILMS BY NEUTRON ACTIVATION AND RADIOTRACER TECHNIQUES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (08) : 862 - +

[5] THERMAL DIFFUSION OF SODIUM IN SILICON NITRIDE SHIELDED SILICON OXIDE FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (07) : 1005 - +

[6] TRACER EVALUATION OF HYDROGEN IN STEAM-GROWN SIO2 FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (2P1) : 196 - &

[7] DIELECTRIC RELAXATION IN THERMALLY GROWN SIO2 FILMS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (02) : 268 - +

[8] Carter, 1962, VACUUM, V12, P245, DOI DOI 10.1016/0042-207X(62)90526-2

[9] EFFECTS OF MATERIAL AND PROCESSING PARAMETERS ON DIELECTRIC STRENGTH OF THERMALLY GROWN SIO2 FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (10) : 1287 - +

[10] APPLICATION OF TRIANGULAR VOLTAGE SWEEP METHOD TO MOBILE CHARGE STUDIES IN MOS STRUCTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (04) : 601 - &

[1] SURFACE-REACTIONS ON MOS STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (11) : 4888 - 4893

[2] BRAUNLICH P, 1968, THERMOLUMINESCENCE G, P61

[3] IONIC THERMOCURRENTS IN DIELECTRICS [J]. PHYSICAL REVIEW, 1966, 148 (02): : 816 - &

[4] STUDIES OF SODIUM IN SIO2 FILMS BY NEUTRON ACTIVATION AND RADIOTRACER TECHNIQUES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (08) : 862 - +

[5] THERMAL DIFFUSION OF SODIUM IN SILICON NITRIDE SHIELDED SILICON OXIDE FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (07) : 1005 - +

[6] TRACER EVALUATION OF HYDROGEN IN STEAM-GROWN SIO2 FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (2P1) : 196 - &

[7] DIELECTRIC RELAXATION IN THERMALLY GROWN SIO2 FILMS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (02) : 268 - +

[8] Carter, 1962, VACUUM, V12, P245, DOI DOI 10.1016/0042-207X(62)90526-2

[9] EFFECTS OF MATERIAL AND PROCESSING PARAMETERS ON DIELECTRIC STRENGTH OF THERMALLY GROWN SIO2 FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (10) : 1287 - +

[10] APPLICATION OF TRIANGULAR VOLTAGE SWEEP METHOD TO MOBILE CHARGE STUDIES IN MOS STRUCTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (04) : 601 - &