RELATIONSHIP BETWEEN HOT-ELECTRONS HOLES AND DEGRADATION OF P-CHANNEL AND N-CHANNEL MOSFETS

[1] THRESHOLD-VOLTAGE INSTABILITY IN MOSFETS DUE TO CHANNEL HOT-HOLE EMISSION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (01) : 83 - 94

[2] GENERATION OF INTERFACE STATES BY HOT HOLE INJECTION IN MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (05) : 913 - 918

[3] STRUCTURE-ENHANCED MOSFET DEGRADATION DUE TO HOT-ELECTRON INJECTION [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (03) : 71 - 74

[4] RELATIONSHIP BETWEEN MOSFET DEGRADATION AND HOT-ELECTRON-INDUCED INTERFACE-STATE GENERATION [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (02) : 50 - 52

[5] HOLE TRAPS AND TRIVALENT SILICON CENTERS IN METAL-OXIDE SILICON DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3495 - 3499

[6] LIANG MS, 1983 IEDM, P186

[7] MATSUMOTO H, 1981, IEEE T ELECTRON DEV, V28, P923, DOI 10.1109/T-ED.1981.20460

[8] NEW HOT-CARRIER INJECTION AND DEVICE DEGRADATION IN SUB-MICRON MOSFETS [J]. IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1983, 130 (03): : 144 - 150

[9] ROLE OF HOT-HOLE INJECTION IN HOT-CARRIER EFFECTS AND THE SMALL DEGRADED CHANNEL REGION IN MOSFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (09) : 329 - 331

[10] LOW-LEVEL AVALANCHE MULTIPLICATION IN IGFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (04) : 419 - 425

[1] THRESHOLD-VOLTAGE INSTABILITY IN MOSFETS DUE TO CHANNEL HOT-HOLE EMISSION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (01) : 83 - 94

[2] GENERATION OF INTERFACE STATES BY HOT HOLE INJECTION IN MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (05) : 913 - 918

[3] STRUCTURE-ENHANCED MOSFET DEGRADATION DUE TO HOT-ELECTRON INJECTION [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (03) : 71 - 74

[4] RELATIONSHIP BETWEEN MOSFET DEGRADATION AND HOT-ELECTRON-INDUCED INTERFACE-STATE GENERATION [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (02) : 50 - 52

[5] HOLE TRAPS AND TRIVALENT SILICON CENTERS IN METAL-OXIDE SILICON DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3495 - 3499

[6] LIANG MS, 1983 IEDM, P186

[7] MATSUMOTO H, 1981, IEEE T ELECTRON DEV, V28, P923, DOI 10.1109/T-ED.1981.20460

[8] NEW HOT-CARRIER INJECTION AND DEVICE DEGRADATION IN SUB-MICRON MOSFETS [J]. IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1983, 130 (03): : 144 - 150

[9] ROLE OF HOT-HOLE INJECTION IN HOT-CARRIER EFFECTS AND THE SMALL DEGRADED CHANNEL REGION IN MOSFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (09) : 329 - 331

[10] LOW-LEVEL AVALANCHE MULTIPLICATION IN IGFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (04) : 419 - 425