RELATIONSHIP BETWEEN MOSFET DEGRADATION AND HOT-ELECTRON-INDUCED INTERFACE-STATE GENERATION

被引：143

作者：

HSU, FC ^{[1
]}

TAM, S ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720

来源：

关键词：

D O I：

10.1109/EDL.1984.25829

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：50 / 52

页数：3

共 12 条

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[3] MATSUMOTO H, 1981, IEEE T ELECTRON DEV, V28, P923, DOI 10.1109/T-ED.1981.20460
[4] MIURA Y, 1980, J ELECTROCHEM SOC, P192
[5] MULLER RS, 1977, DEVICE ELECTRONICS I, pCH8
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TAYLOR, GW
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (08) : 871 - 876
[7] NING TH, 1974, J APPL PHYS, V45, P5373, DOI 10.1063/1.1663246
[8] 1 MU-M MOSFET VLSI TECHNOLOGY .4. HOT-ELECTRON DESIGN CONSTRAINTS
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 346 - 353
[9] THE EFFECT OF TEMPERATURE ON HOT-ELECTRON TRAPPING IN MOSFETS
SATOH, Y
MIYAMOTO, K
MATSUMOTO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (04): : L221 - L222
[10] INTERFACE STATES IN MOSFETS DUE TO HOT-ELECTRON INJECTION DETERMINED BY THE CHARGE PUMPING TECHNIQUE
SCHMITT, D
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[J]. ELECTRONICS LETTERS, 1981, 17 (20) : 761 - 762