GENERATION OF INTERFACE STATES BY HOT HOLE INJECTION IN MOSFETS

[1] HOT-CARRIER INSTABILITY IN IGFETS [J]. APPLIED PHYSICS LETTERS, 1975, 27 (03) : 147 - 148

[2] HOT-ELECTRON EMISSION IN N-CHANNEL IGFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 520 - 533

[3] CHARACTERIZATION OF ELECTRONIC GATE CURRENT IN IGFETS OPERATING IN LINEAR AND SATURATION REGIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (09) : 1200 - 1200

[4] TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1966, 9 (06) : 242 - &

[5] HOT-ELECTRON INJECTION INTO THE OXIDE IN N-CHANNEL MOS DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (03) : 328 - 340

[6] Euzent B., 1977, 15th Annual Proceedings Reliability Physics, P1, DOI 10.1109/IRPS.1977.362763

[7] THRESHOLD-VOLTAGE INSTABILITY IN MOSFETS DUE TO CHANNEL HOT-HOLE EMISSION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (01) : 83 - 94

[8] HOT ELECTRON EFFECTS AND SATURATION VELOCITIES IN SILICON INVERSION LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) : 1825 - +

[9] A NEW INSTABILITY IN MOS TRANSISTOR CAUSED BY HOT ELECTRON AND HOLE INJECTION FROM DRAIN AVALANCHE PLASMA INTO GATE OXIDE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (09) : 1103 - +

[10] HOFMANN KR, 1981, ELECTROPHYSICS SERIE, V7, P122

[1] HOT-CARRIER INSTABILITY IN IGFETS [J]. APPLIED PHYSICS LETTERS, 1975, 27 (03) : 147 - 148

[2] HOT-ELECTRON EMISSION IN N-CHANNEL IGFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 520 - 533

[3] CHARACTERIZATION OF ELECTRONIC GATE CURRENT IN IGFETS OPERATING IN LINEAR AND SATURATION REGIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (09) : 1200 - 1200

[4] TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1966, 9 (06) : 242 - &

[5] HOT-ELECTRON INJECTION INTO THE OXIDE IN N-CHANNEL MOS DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (03) : 328 - 340

[6] Euzent B., 1977, 15th Annual Proceedings Reliability Physics, P1, DOI 10.1109/IRPS.1977.362763

[7] THRESHOLD-VOLTAGE INSTABILITY IN MOSFETS DUE TO CHANNEL HOT-HOLE EMISSION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (01) : 83 - 94

[8] HOT ELECTRON EFFECTS AND SATURATION VELOCITIES IN SILICON INVERSION LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) : 1825 - +

[9] A NEW INSTABILITY IN MOS TRANSISTOR CAUSED BY HOT ELECTRON AND HOLE INJECTION FROM DRAIN AVALANCHE PLASMA INTO GATE OXIDE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (09) : 1103 - +

[10] HOFMANN KR, 1981, ELECTROPHYSICS SERIE, V7, P122